Grat-FET™

Grat-FET^TM: Graphene Field-Effect Transistors.

BGTM's Grat-FET^TM products are state-of-the-art, three-terminal Field-Effect Transistors (FETs) that rely on BGT Materials’s exclusive, high-mobility CVD graphene, Grat-M^TM. Each Grat-FET^TM chip consists of an array of 36 graphene FETs with nine different graphene channel length/width arrangements to accommodate all research and development settings.

Graphene FETs are fabricated on a Si wafer covered with a SiO₂ layer, and the high-mobility Grat-M^TM graphene is used as the transistor channel. The graphene transistor consists of three terminals: source and drain metal electrodes contacting the graphene channel and a global back gate enabled by the doped Si substrate. These features facilitate the characteristic ambipolar transport behavior of graphene in the Grat-FETs – achieving both n-type and p-type transport when biased with a proper gate voltage at the substrate.

As with all BGT Materials products, every Grat-FET is tested to ensure our high-quality standards are met.

Features & Benefits

• High field-effect carrier mobility of 2000 cm²/Vs or more
• Ambipolar transport
• Uncovered graphene channel
• Small uncontrolled doping
• Fabricated on highly-doped Si substrate, which can be used as gate electrode
• Individual control of each transistor to be biased or connected externally
• Each chip comes with multiple transistors of nine different channel dimensions

Technical Specs

Electrical Characteristic Curves (Room temperature, Ambient)